Continuing our look at the SEMI 3D European Summit:
Oerlikon
Systems
Oerlikon systems discussed PVD solutions for TSV
metallization. Since sputter deposition is line-of-sight, it has been difficult
for it to fill high AR features. Ionized PVD addresses this coverage in high AR issue, but significantly increases
the equipment costs.
Highly ionized sputtering (HIS) is based on high power pulsed
magnetron sputtering and reportedly has excellent directionality and film quality.
It deposits at a higher rate that ionized PVD.
They showed the following coverage for TI barrier layer in 10:1 AR TSV...
and the following data for Cu seed layers:
IMEC
Eric Beyne of IMEC discussed the 3D technology maturation
process and COO issues.
The std IMEC 3DIC TSV process has had 5 x 50 um TSV, but
recently they have indicated that a more to 3um dia TSV may be warranted. One
reason is that a reduction in the dia of the TSV correspondingly reduces the
keep out zone (KOZ) requirements.
IMEC assessment of the cost structure for a 10 x 100 um
interposer TSV vs a std 5 x 50 TSV vs the proposed 3 x 50 TSV looks like this:
Amkor
Ron Huemoeller of Amkor addresses future packaging needs. He
showed an interesting Prismark slide, which showed that smart phones and tablets
will account for more than 50% of the Semi Ind growth through 2016.
In terms of interposers, Ron shared his views on interposer
density vs application space. IFTLE has mentioned several times that the only
interposer programs that have been announced are ones requiring high density
interposers only available from foundries. Although this statement still holds
true, Ron points to “ lower end smart phones and tablets” as potentially requiring interposers with less
than 8 um l/s which could be fabricated by an OSAT RDL line.
For all the latest in 3DIC and advanced packaging, stay linked
to IFTLE.
No comments:
Post a Comment