To address these issues, SEMATECH held a workshop on “Stress Management for 3D ICs” on March 16, 2010 in Albany, NY. Thanks to old friend Larry Smith for sending the pertinent info from this conference to share with you.
Synopsys
Xiaopeng Xu detailed the use of the Synopsis TCAD software to analyze 3-D structures [ link ]. The different modules in TCAD can not only be used to extract 3-D R,C & L but can also predict interconnect stress distributions from multiple stress sources and reportedly detect stress hot spots that are susceptible to debonding, voiding and cracking.
The presence of TSV appears to create more impact on the mobility of p doped Si than n doped as shown below.
Also of significant interest is the data which reveals that low-k dielectric with its inherent lower modulus results in less resistance to copper extrusion.
On Mar 09, 2010 Synopsys, and IMEC announced they have entered into a collaboration to use Synopsys TCAD (Technology Computer-Aided Design) finite-element method tools for characterizing and optimizing the reliability and electrical performance of through-silicon vias (TSVs).Ansys
Kamal Karimanal of Ansys looked at techniques applicable to TSV based 3D packaging. AN example is the use of ANSYS Icepak Software to examine metal distribution and calculate temperature variations across the stack.
Qualcomm
Riko Radojcic of Qualcomm pointed out that stress management was important because for 3-D it becomes the sum of the on chip strains + the normal chip package interactions and the new 3-D TSV issues such as:
- interaction of (big) Cu TSV and surrounding devices
- µ-Bump issues with Tier 1 and Tier 2 die
- thin Si : Enhanced BEOL-FEOL + Si-package CTE Mismatch
- backside RDL : new CTE Mismatch challenges
- die to die : stress re-distribution among the stacked die
- die alignment : stress concentration among stacked die
He points out that we currently manage this on 2D chips through design rules and that it is these design rules that must be extended to 3-D stacks such as:
- Keep Out Zone Rules
- No change to device characteristics vs. ‘normal 2D Si (all devices)
- Die Stacking & Alignment Rules
- No incremental CPI effects for T1-T2 and T1-Package Interactions
- PAD and CUP Rules for µ-Bumps
- No CPI or Performance impact on either T1 or T2
Radojcic proposes an EDA solution “ that bridges package and Si design and simulation environments without forcing re-tooling from incumbent solution in either domain”IMEC
Geert Van der Plas of IMEC indicated that insight into 3-D IC thermo-mechanical behavior requires analysis of test structures such as those shown below.
For all the latest in 3DIC and advanced packaging stay linked to Insights From the Leading Edge, IFTLE……
Phil, nice summary, I look forward to your other reports on 3D IC design flow.
ReplyDeleteI think it will become more critical to understand the behaviour of TSV's when the 3D stacks become more main stream with functions as power management and sensors. With increasing current densities, thermal, electromigration & stress migration modeling at a system level will become a must have feature.
Stacked system-level modeling and optimization tools for TSV's, RDL's and interposers are quite a challenge to integrate with the existing EDA tools. The multiobjective simulation at that level is not only resource-limiting but may limit the development of 3D stacks to more experimenting than upfront simulation. I have seen a couple of 3D integrators at the recent DAC 2010 at Anaheim. Though they leave a lot to be desired, I do think they are a good start. How ever, one dilemma is where do we integrate such capabilities? A stand-alone integrator, or, EDA tools, or TCAD tools?
It took almost a decade for the mechanical/structural simulation industry to fully integrate their solutions within CAD tools (such as SolidWorks, ProEngineer, etch) and find user acceptance. I hope it takes lot less than that for the chip industry to evolve a 3D design environment.
MP Divakar, PhD
Vice President
Concurrent Analysis Corp.